Crystals and optics processing services

TGG is an excellent magneto-optical crystal used in various Faraday devices(Polarizer and Isolator) in the range of 400nm-1100nm, excluding 475-500nm.

Penta Prisms are used to define right angles in optical systems. Penta Prisms, which provide right handed images,feature a ray deviation of 90°. Penta Prisms are five-sided prisms are unaffected by slight movements. HG OPTRONICS offers a variety of Penta Prisms for optimal performance in the Ultraviolet (UV), Visible, or Infrared (IR) spectrums.  

C-lens are specifically designed for fiber optics applications such as collimator, isolator, switch, collimator array and laser assembly. Compare to other gradient index lens, C-lens have several advantages including low cost, low insertion loss in long working distance, and wide working distance range. With our experienced optical design engineers, HG OPTRONICS can also provide custom designed C-lens per customer's requirement.

Nd:GdVO4, is a promising material for diode pumped lasers. Similar to the more well-known Nd:YVO4 crystal, Nd:GdVO4 crystal also exhibits high gain, low threshold, and high absorption coefficients at pumping wavelengths. Nd:GdVO4 has the additional advantage over Nd:YVO4 of a much higher thermal conductivity. For CW lasing at 1.06 um and 1.34 um and intracavity doubling with KTP and LBO, the gadolinium vanadate have produced a higher slope efficiency or optical conversion than Nd:YVO4.

Germanium (Ge) is the preferred lens and window material for high performance infrared imaging systems in the 8–12 um wavelength band.

Our beamsplitter plates can be used in high power laser system. When using beamsplitter plates, it is important to make it in mind that the two partial beams travel in different optical paths. The optical paths depend on the incident angle and the thickness of plates.

Silicon is used as an optical window primarily in the 3 to 5 micron band and as a subsrate for production of optical filters and windows.     Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.    

HGO grows BBO Nonlinear crystals using flux technology. BBO crystal transparency ranges from 188 nm to 5,2 µm, which includes reasonable transparency from 3-5,2 µm for few tens µm thick crystals, while their phase-matchable range spans almost over the entire transparency range. Combined with other magnificent properties of BBO, it is favorable for numerous nonlinear parametric applications. It is worth to mention that BBO crystals have the highest nonlinearity in the UV range out of all common nonlinear crystals.