Laser Optics

Prisms are transparent optical devices which refract or reflect light. They have manifold applications in laser technology.

Laser Lenses are used to focus collimated light from laser beams in a variety of laser applications. Laser Lenses include a range of lens types including HGQ Lenses, Cylinder Lenses, or Laser Generator Lenses. Laser Lenseare designed to focus light in several different ways depending on the lens type, such as focusing down to a point,a line, or a ring. Many different lens types are available in a range of wavelengths.

Laser Protect Windows(Laser protective glass, protective filters or welding protective windows) are used to save for the high cost of laser optics.

Laser mirrors are fabricated with specialized coatings, which will offer high damage thresholds.

Our beamsplitter plates can be used in high power laser system. When using beamsplitter plates, it is important to make it in mind that the two partial beams travel in different optical paths. The optical paths depend on the incident angle and the thickness of plates.

HGO grows Ho:YLF laser crystals using Czochralski technology. Ho:YLF is a very attractive laser material, because the lifetime of the upper laser level is much longer ( ~ 14 ms) than in Ho:YAG and the emission cross sections are higher. Additionally the thermal lens in Ho:YLF is much weaker, which helps to generate diffraction limited beams even under intense end-pumping. The primary advantage of directly pumping the Ho 5I7 is that it does not have to depend on energy transfer, which lends itself to various radiative and non-radiative losses. Up-conversion losses that have deleterious effect in high-energy Q-switched lasers are eliminated.

  LiNbO3 is widely used as electro-optic modulators and Q-switches for Nd:YAG, Nd:YLF and Ti:Sapphire lasers as well as modulators for fiber optics.  

Silicon is used as an optical window primarily in the 3 to 5 micron band and as a subsrate for production of optical filters and windows.     Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.