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/Ho:YLF crystal Holmium-doped Yttrium Lithium Fluoride

Ho:YLF crystal Holmium-doped Yttrium Lithium Fluoride

HGO grows Ho:YLF laser crystals using Czochralski technology. Ho:YLF is a very attractive laser material, because the lifetime of the upper laser level is much longer ( ~ 14 ms) than in Ho:YAG and the emission cross sections are higher. Additionally the thermal lens in Ho:YLF is much weaker, which helps to generate diffraction limited beams even under intense end-pumping.

The primary advantage of directly pumping the Ho 5I7 is that it does not have to depend on energy transfer, which lends itself to various radiative and non-radiative losses. Up-conversion losses that have deleterious effect in high-energy Q-switched lasers are eliminated.

  • Product Origin:

    China
  • Shipping Port:

    Fuzhou, China
  • Lead Time:

    3-4weeks
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  • Product Detail

Descriptions:

HGO grows Ho:YLF crystal Holmium-doped Yttrium Lithium Fluoride . Ho:YLF is a very attractive laser material, because the lifetime of the upper laser level is much longer ( ~ 14 ms) than in Ho:YAG and the emission cross sections are higher. Additionally the thermal lens in Ho:YLF is much weaker, which helps to generate diffraction limited beams even under intense end-pumping.


Optical and physical properties of Ho:YLF crystal

Absorption peak wavelength

1940nm

Absorption cross-section at peak

1,2×10-20 cm2

Absorption bandwidth at peak wavelength

~18 nm

Laser wavelength

2060 nm

Lifetime of 5I7 energy level

10 ms

Emission cross-section

1,8×10-20 cm2

Refractive index @1064 nm

no=1,448, ne=1,470

dn/dT

-4,6 × 10-6 (||c) K-1, -6,6 × 10-6 (||a) K-1

Thermal expansion coefficient

10,1 × 10-6 (||c) K-1, 14,3 × 10-6 (||a) K-1

Thermal Conductivity /(W·m-1·K-1)

6 Wm-1K-1

Crystal structure

tetragonal

Melting Point

819°C

Density

3.95 g/cm3

Mohs hardness

5

Typical doping level

0.5-1%


HGO offers Pr:YLF specifications:

Doping(atm%):

0.5% ~ 1%

Orientation:

a-cut/c-cut crystalline direction

Wavefront Distortion:

λ/4per inch @ 632.8 nm

Dimension Tolerances

+0.0/-0.05 mm , Length: ±0.1 mm

Surface Quality:

10/5 Scratch/Dig MIL-O-1380A

Parallelism:

< 10

Perpendicularity:

< 5

Clear Aperture:

> 90%

Surface Flatness:

< λ/10 @ 632.8 nm

Chamfer:

< 0.1 mm @ 45o

Barrel Finish

50-80 micro-inch (RMS) ,

Size

Upon customer request

Coating

AR/HR/PR coating upon customer’s request

Damage Threshold

750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz

Quality Warranty Period

One year under proper use

Other YLF-based Nd/Pr/Tm/Yb/Er/Ce YLF are also available upon request.

Advantages:

1) Long upper laser level lifetime ~ 15 ms

2) Higher emission cross-section

3) Low dn/dT –> weak thermal lensing

4) Highest (to the best of our knowledge) CW output of 21 W for 2-μm Ho:YLF laser

5) Efficient Q-switched operation (up to 37 mJ per pulse)



Why Choose HGO ?

HG OPTRONICS.,INC. grow YLF-based crystals in house using CZ growth technology. The use of high quality starting materials for crystal growth, whole boule interferometry, precise inspection of scattering particle in crystal using He-Ne laser and delicated measurement of bulk losses using spectrophotometer assures that each crystal will comply with customer’s specification and perform well.

And base on our diffusion bonding technology various YLF-based configurations are availabl to supply,

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