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Tm:YLF crystal Thulium-doped Yttrium Lithium Fluoride

HGO grows Tm:YLF laser crystals using Czochralski technology. Tm:YLF is an important middle infrared laser crystal. Because Tm:YLF is negative uniaxial crystal, whose thermal refractive index coefficient is negative, some thermal distortion may be counteracted and high-quality light can be output. Conveniently pumped at 792nm, 1.9μm linearly polarized beam is output in a axis, and non-linearly polarized beam is output in c axis. The YLF crystals has low non-linear refraction index value and thermo optical constants, which makes these crystals applicable in research, development, education, production, photonics, optic, laser technology and telecommunications.

Besides, Tm3+:YLF lasers are ideal pump sources for 2.1 μm Ho3+:YAG lasers. This is due to a good overlap of Tm3+:YLF emission and Ho3+:YAG absorption spectra and the capacity of producing linearly polarized output. What is more, the refractive index of Tm3+:YLF decreases with temperature, leading to a negative thermal lens that is partly compensated by a positive lens effect due to end face bulging.

  • Product Origin:

    China
  • Shipping Port:

    Fuzhou, China
  • Lead Time:

    3-4weeks
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  • Product Detail

Descriptions:

HGO grows Tm:YLF crystal Thulium-doped Yttrium Lithium Fluoride. Tm:YLF is an important middle infrared laser crystal. Conveniently pumped at 792nm, 1.9μm linearly polarized beam is output in a axis, and non-linearly polarized beam is output in c axis.



Optical and physical properties of Tm:YLF crystal

Absorption peak wavelength

792 nm

Absorption cross-section at peak

0,55 × 10-20 cm2

Absorption bandwidth at peak wavelength

16 nm

Laser wavelength

1900 nm

Lifetime of 3F4 energy level

16 ms

Emission cross-section@1900 nm

0,4 × 10-20 cm2

Refractive index @1064 nm

no=1,448, ne=1,470

dn/dT

π = 4.3 x 10-6 x °K-1; σ = 2.0 x 10-6 x °K-1

Thermal expansion coefficient10-6·K-1@25°C

10.1×10-6 (//c) K-1, 14.3×10-6((//a) K-1

Thermal Conductivity /(W·m-1·K-1)

6 Wm-1K-1

Crystal structure

tetragonal

Melting Point

819°C

Density

3.99 g/cm3

Mohs hardness

5

Shear Modulus /Gpa

85

Specific Heat

0.79 J/gK

Poisson Ratio

0.3

Typical doping level

2-4%


HGO offers Tm:YLF specifications:

Doping(atm%):

2% ~ 12%

Orientation:

a-cut/c-cut crystalline direction

Wavefront Distortion:

λ/4per inch @ 632.8 nm

Dimension Tolerances

+0.0/-0.05 mm , Length: ±0.1 mm

Surface Quality:

10/5 Scratch/Dig MIL-O-1380A

Parallelism:

< 10

Perpendicularity:

< 5

Clear Aperture:

> 90%

Surface Flatness:

< λ/10 @ 632.8 nm

Chamfer:

< 0.1 mm @ 45o

Barrel Finish

50-80 micro-inch (RMS) ,

Size

Upon customer request

Coating

AR/HR/PR coating upon customer’s request

Damage Threshold

750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz

Quality Warranty Period

One year under proper use

Other YLF-based Nd/Pr/Ho/Yb/Er/Ce YLF are also available upon request.

Advantages:

1) Linearly polarized output beam

2) Little heat effect while lasering

3) Effective cross relaxing of Tm ions

4) High efficiency with LD pumping

5) Low nonlinear refractive index

6) Low thermo-optical constant

7) Low polarization loss

8) Long upper energy level fluorescence lifetime

9) Small up-conversion effect

10) No absorption loss of sensitized ions


Why Choose HGO ?

HG OPTRONICS.,INC. grow YLF-based crystals in house using CZ growth technology. The use of high quality starting materials for crystal growth, whole boule interferometry, precise inspection of scattering particle in crystal using He-Ne laser and delicated measurement of bulk losses using spectrophotometer assures that each crystal will comply with customer’s specification and perform well.

And base on our diffusion bonding technology various YLF-based configurations are availabl to supply.

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