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Yb:KGd(WO4)2, Yb:KGW Crystals(Ytterbium-doped Potassium Gadolinium Tungstate)

Ytterbium-doped Potassium Gadolinium Tungstate (Yb:KGd(WO₄)₂, Yb:KGW) crystal is an excellent laser gain material, boasting numerous advantages over the widely used Nd³⁺-doped materials. Its wide spectral emission band of 1023-1060 nm enables the generation of short laser pulses (picosecond or femtosecond level). The broad absorption band at 980 nm and highly absorbent pump radiation allow it to efficiently utilize diode laser pumping. Compared with YAG doped with Yb³⁺ ions, KGW crystal has a larger absorption cross-section, which reduces the minimum pump intensity required to achieve transparency in the quasi-two-level system of Yb.

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Descriptions:

Ytterbium-doped Potassium Gadolinium Tungstate (Yb:KGd(WO₄)₂, Yb:KGW) crystal is an excellent laser gain material, boasting numerous advantages over the widely used Nd³⁺-doped materials. Its wide spectral emission band of 1023-1060 nm enables the generation of short laser pulses (picosecond or femtosecond level). The broad absorption band at 980 nm and highly absorbent pump radiation allow it to efficiently utilize diode laser pumping. Compared with YAG doped with Yb³⁺ ions, KGW crystal has a larger absorption cross-section, which reduces the minimum pump intensity required to achieve transparency in the quasi-two-level system of Yb.

Advantages:

1) High absorption coefficient in the 981 nm band;

2) Large stimulated emission cross-section;

3) Low laser threshold;

4) Extremely low quantum loss;

5) Broadband polarized output @ 1023~1060 nm;

6) High slope efficiency (up to 60%) under diode pumping;

7) High Yb doping concentration.

 

HGO offers Yb:YAG specifications:

Orientation:

<010>

Doping(atm%):

1%~5%

Dimension Tolerances 

Diameter: ±0.1 mm , Length: ±0.5 mm

Surface Quality:

10/5 Scratch/Dig MIL-O-1380A

Surface Flatness:

< λ/6 @ 632.8 nm

Parallelism:

< 20

Perpendicularity:

<15 

Quality Warranty Period

   One year under proper use

 

Main Applications

1) High-power Diode-Pumped Lasers —— Based on 940nm/970nm InGaAs diode pumping, achieving high-average-power continuous wave (CW) or pulsed laser output in the 1030 nm band;

2) Core Gain Medium for Raman Lasers —— Utilizing strong Raman activity to realize Raman shift conversion in the near-infrared to mid-infrared band, outputting laser at specific wavelengths (e.g., 1100-1500 nm);

3) Pump Source for Optical Parametric Oscillation (OPO) —— Adapting to high-power OPO systems, expanding the near-infrared to mid-infrared tunable laser range (2-5 μm);

4) Precision Laser Micromachining —— Used for high-precision cutting, drilling, and etching of materials such as metals, glass, and ceramics (relying on high beam quality and short pulse characteristics);

5) Laser Spectroscopy Analysis —— Serving as the excitation light source for Raman spectrometers, suitable for scenarios such as material characterization, molecular structure detection, and biomedical sample analysis;

6) Integrated Optics and Micro-Laser Devices —— Used in miniaturized and integrated laser modules to meet the frequency extension needs of portable equipment and space-constrained systems;

7) Nonlinear Optical Composite Applications —— Combining second-harmonic generation / sum-frequency generation effects to achieve laser output in the visible (e.g., 515 nm) or deep ultraviolet band, suitable for display, lithography assistance, and other fields.

 

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