Waveplate

Cr4+:YAG (Y3Al5O12) crystal is ideal for passive Q-switch operation of Nd:YAG and other Nd3+ or Yb3+ doped laser crystals in the wavelength range of 900 nm to 1200 nm. Passive Q-switches or saturable absorbers provide high power laser pulses without electro-optic Q-switches, thereby reducing the package size and eliminating a high voltage power supply. A remarkable feature of Cr4+:YAG is the high damage threshold of >10 J/cm2@1064 nm, 10 ns. Its absorption band extends from 900 nm to 1200 nm and peaks around 1060 nm with a very large absorption cross-section.

HGO grows BBO Nonlinear crystals using flux technology. BBO crystal transparency ranges from 188 nm to 5,2 µm, which includes reasonable transparency from 3-5,2 µm for few tens µm thick crystals, while their phase-matchable range spans almost over the entire transparency range. Combined with other magnificent properties of BBO, it is favorable for numerous nonlinear parametric applications. It is worth to mention that BBO crystals have the highest nonlinearity in the UV range out of all common nonlinear crystals.

HGO is a company has skillful workers with wide processing experiences and skillful processing technique. Thus we also offer processing service such as oriented, cutting, grinding, polishing ,repolishing, coating ,recoating and diffusion bonding etc. Customers are very welcome to contact with us for further information.

Beamsplitter Penta Prism by adding a wedge and with partial reflective coating on one of its leaning surfaces, Penta Prism can be used as Beamsplitter. Transmission/reflection (T/R) ratio of 50/50, or others for Beamsplitter Penta Prism is available upon request.

Silicon is used as an optical window primarily in the 3 to 5 micron band and as a subsrate for production of optical filters and windows.     Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.    

Co2+:MgAl2O4 Cospinel is a relatively new material for passive Q-switching in lasers emitting from 1.2 to 1.6 μm, in particular, for eye-safe 1.54 μm Er:glass laser, but also works at 1.44 μm and 1.34 μm wavelengths. Spinel is a hard, stable crystal that polishes well. Cobalt substitutes readily for magnesium in the Spinel host without the need for additional charge compensation ions. High absorption cross section (3.5×10-19 cm2) permits Q-switching of Er:glass laser without intracavity focusing both with flash-lamp and diode-laser pumping. Negligible excited-state absorption results in high contrast of Q-switch, i.e. the ratio of initial (small signal) to saturated absorption is higher than 10.

HGO grows LiF crystals in house using Czochralski technology. LiF crystal or lithium fluoride crystal is an optical material with outstanding transmittance in VUV region. It is also used for windows, prisms, and lenses in the visible and infrared in 0.104µm-7µm. LiF single crystal is sensitive to thermal shock and would be attacked by atmospheric moisture at 400°C. When working at a high temperature of 600°C, the LiF crystal softens and is slightly plastic, so it can be bent into radius plates. In addition irradiation produces color centers. Hence, users should take measures to protect LiF crystals from moisture and high energy radiation damages. What is more LiF can be cleaved along (100) plane and less commonly (110) plane. The optical characteristics are good and yet the structure is not perfect and cleavage is difficult.

Ytterbium-doped Potassium Gadolinium Tungstate (Yb:KGd(WO₄)₂, Yb:KGW) crystal is an excellent laser gain material, boasting numerous advantages over the widely used Nd³⁺-doped materials. Its wide spectral emission band of 1023-1060 nm enables the generation of short laser pulses (picosecond or femtosecond level). The broad absorption band at 980 nm and highly absorbent pump radiation allow it to efficiently utilize diode laser pumping. Compared with YAG doped with Yb³⁺ ions, KGW crystal has a larger absorption cross-section, which reduces the minimum pump intensity required to achieve transparency in the quasi-two-level system of Yb.