Polarizing Beamsplitter Cubes Mounted And Unmounted

Non-Polarizing Cube Beamsplitters also called NPBS Cube is a more sophisticated type consisting of two right- angle prisms cemented together at their hypotenuse faces.The cemented face of one prism is coated. Before cementing, with a metallic or dielectric layer having the desired reflecting properties, both in the percentage of reflection and the desired color. The absorption loss to the coating is minimal and transmission and reflection could be designed to 10%, 20%, 30%, 40%, 50%, etc.

Beamsplitter Cubes are constructed by cemented two right angle prisms.  The hypotenuse of one prism is coated with polarization dielectric coating.

Our beamsplitter plates can be used in high power laser system. When using beamsplitter plates, it is important to make it in mind that the two partial beams travel in different optical paths. The optical paths depend on the incident angle and the thickness of plates.

Nd:YVO4 (Neodymium Doped Yttrium Orthovanadate) crystals is one of the most promising commercially available diode pumped solid state laser materials, especially, for low to middle power density. This is mainly for its higher absorption and emission features than Nd:YAG crystal. Pumped by laser diodes, Nd:YVO4 crystal has been incorporated with high NLO coefficient crystals ( LBO, BBO, or KTP) to frequency-shift the output from the near infrared to green, blue, or even UV. This incorporation to construct all solid state lasers is an ideal laser tool that can cover the most widespread applications of lasers, including machining, material processing, spectroscopy, wafer inspection, light displays, medical diagnostics, laser printing, and data storage, etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets traditionally dominated by water-cooled ion lasers and lamp-pumped lasers, especially when compact design and single-longitudinal-mode outputs are required.

MgF2 or Magnesium Fluoride is positive uni-axial crystal with a very high optical transmittance from the vacuum UV to IR. It is regularly used for optical elements where extreme ruggedness and durability is required. It also has a large resistance to mechanical and thermal shock, to optical radiation, and is chemically stable, making it a very useful materials for UV and IR optics.

α-BBO (α-BaB2O4) is a negative uniaxial crystal which has large birefringence over a broad transparent range of 190nm to 3500nm. α-BBO is an excellent crystal especially in UV and high power applications. The physical, chemical, thermal, and optical properties of alpha-BBO crystal are similar to those of Beta-BBO. However, there is no second order nonlinear effect in alpha-BBO crystal due to the centrosymmetry in its crystal structure and thus it has no use for second order nonlinear optical processes. Instead, alpha-BBO is widely used for fabrication of polarizers, polarizing beam displacers, phase retarders, birefringent plates, and time delay compensators especially those for UV and high power lasers.

The Positive Meniscus Lenses are a convex-concave lens, but it is thicker at the center than at the edges. They are felt polished and are used universally in the ophthalmic industry where convention dictates that lens power be specified in Diopters. The Negative Meniscus Lenses are a convex-concave lens, but it is thinner at the center than at the edges. Otherwise description is similar to Plano Concave lenses.

Silicon is used as an optical window primarily in the 3 to 5 micron band and as a subsrate for production of optical filters and windows. Silicon (Si) is grown by Czochralski pulling techniques (CZ) and contains some oxygen that causes an absorption band at 9 microns. To avoid this, material can be prepared by a Float-Zone (FZ) process. Optical silicon is generally lightly doped (5 to 40 ohm cm) for best transmission above 10 microns, and doping is usually boron (P-type) and phosphorus (N-type). After doping silicon has a further pass band: 30 to 100 microns which is effective only in very high resistivity uncompensated material.